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Electrical Characteristics of the IGBT T
C
= 25 ? C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BV CES
? B VCES /
? T J
I CES
I GES
Collector-Emitter Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Collector Cut-Off Current
G-E Leakage Current
V GE = 0 V, I C = 250 uA
V GE = 0 V, I C = 1 mA
V CE = V CES , V GE = 0 V
V GE = V GES , V CE = 0 V
600
--
--
--
--
0.6
--
--
--
--
250
± 100
V
V/ ? C
uA
nA
On Characteristics
V GE(th)
G-E Threshold Voltage
Ic = 50 mA, V CE = V GE
5.0
6.0
8.5
V
V CE(sat)
Collector to Emitter
Saturation Voltage
I C = 50 A ,
I C = 80 A ,
V GE = 15 V
V GE = 15 V
--
--
2.2
2.5
2.8
--
V
V
Dynamic Characteristics
C ies
C oes
C res
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V CE =30 V , V GE = 0 V,
f = 1 MHz
--
--
--
3311
399
139
--
--
--
pF
pF
pF
Switching Characteristics
t d(on)
t r
Turn-On Delay Time
Rise Time
--
--
26
89
--
--
ns
ns
t d(off)
t f
E on
E off
E ts
t d(on)
t r
t d(off)
t f
E on
E off
E ts
T sc
Q g
Q ge
Q gc
L e
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Internal Emitter Inductance
V CC = 300 V, I C = 50 A,
R G = 5.9 ? , V GE = 15 V,
Inductive Load, T C = 25 ? C
V CC = 300 V, I C = 50 A,
R G = 5.9 ? , V GE = 15 V,
Inductive Load, T C = 125 ? C
V CC = 300 V, V GE = 15 V
@ T C = 100 ? C
V CE = 300 V, I C = 50 A,
V GE = 15 V
Measured 5mm from PKG
--
--
--
--
--
--
--
--
--
--
--
--
10
--
--
--
--
66
118
1.68
1.03
2.71
28
91
68
261
1.7
2.31
4.01
--
145
25
70
18
100
200
--
--
3.8
--
--
110
400
--
--
5.62
--
210
35
100
--
ns
ns
mJ
mJ
mJ
ns
ns
ns
ns
mJ
mJ
mJ
us
nC
nC
nC
nH
Electrical Characteristics of DIODE T C
= 25 ? C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V FM
t rr
I rr
Q rr
Diode Forward Voltage
Diode Reverse Recovery Time
Diode Peak Reverse Recovery
Current
Diode Reverse Recovery Charge
I F = 30 A
I F = 30 A,
di F /dt = 200 A/us
T C = 25 ? C
T C = 100 ? C
T C = 25 ? C
T C = 100 ? C
T C = 25 ? C
T C = 100 ? C
T C = 25 ? C
T C = 100 ? C
--
--
--
--
--
--
--
--
1.9
1.8
70
140
6
8
200
580
2.8
--
100
--
7.8
--
360
--
V
ns
A
nC
?1999 Fairchild Semiconductor Corporation
SGL50N60RUFD Rev. C1
2
www.fairchildsemi.com
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